1 AM6612N analog power preliminary publication order number: ds-am6612_i these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. 1 2 3 45 6 7 8 n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) m( ? )i d (a) 22 @ v gs = 10v 9.4 30 @ v gs = 4.5v 7.0 product summary 30 symbol maximum units v ds 30 v gs 20 t a =25 o c9.4 t a =70 o c7.4 i dm 30 i s 1.6 a t a =25 o c3.1 t a =70 o c2 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 10 sec 50 o c/w steady state 92 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja
2 AM6612N analog power preliminary publication order number: ds-am6612_i notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 9.2 a 22 v gs = 4.5 v, i d = 7 a 30 forward tranconductance a g fs v ds = 15 v, i d = 9.2 a 40 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.7 v total gate charge q g 4.0 gate-source charge q gs 1.1 gate-drain charge q gd 1.4 input capacitance c iss 720 output capacitance c oss 165 reverse transfer capacitance c rss 60 turn-on delay time t d(on) 16 rise time t r 5 turn-off delay time t d(off) 23 fall-time t f 3 dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on) v dd = 10 v, r l = 6 ? , i d = 1 a, v gen = 10 v v ds = 10 v, v gs = 4.5 v, i d = 7 a nc v ds = 15 v, v gs = 0 v, f = 1mhz pf ns m ? parameter limits unit
3 AM6612N analog power preliminary publication order number: ds-am6612_i 0 5 10 15 20 25 30 00.511.522.5 vds, drain-source voltage (v) id, drain current (a) 5.0v vgs = 10v 6.0v 3.0v 4.0v 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 4.5 vgs, gate to source voltage (v) id, drain current (a) ta = -55 o c 25 o c 125 o c vds = 5v 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 id, drain current (a) rds(on), normalized drain-source on-resistanc e 4.5v 6.0v 10v 0 300 600 900 1200 1500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v typical electrical characteristics (n-channel) 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50 -25 0 25 50 75 100 125 150 t j juncation temperature (c) normalized r ds (on) v gs = 10v i d = 7a figure 1. on-region characteristics figure 2. body diode forward voltage variation with source current and temperature figure 6. on-resistance variation with temperature figure 5. gate charge characteristics figure 4. capacitance characteristics figure 3. on resistance vs vgs voltage 0 2 4 6 8 10 0246810 qg, charge (nc) vgs gat e-so urce vo lt age ( v )
4 AM6612N analog power preliminary publication order number: ds-am6612_i 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 vsd, body diode forward voltage (v) is, reverse drain current (a ) ta = 125 o c 25 o c vgs = 0v 0 0.02 0.04 0.06 0.08 0.1 246810 vgs, gate to source voltage (v) rds(on), on-resistance (ohm ) id = 7 a ta = 25 o c 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature (oc) -vth, gate-source thresthol d voltage (v) vds = vgs id = -250ma 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125oc/w ta = 25oc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, tim e (s e c ) s in g le p uls e 0.0 1 0.02 0.0 0. 1 0.2 d = 0.5 r qj a(t) = r(t) + r qj a C rqja = 125 /w tj - ta = p * rqj a(t) duty cycle, d = t1 / t2 p(pk) t1 t2 typical electrical characteristics (n-channel) figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation figure 9. vth gate to source voltage vs temperature figure 7. transfer characteristics figure 8. on-resistance with ga te to source voltage normalized thermal transien t junction to ambient
5 AM6612N analog power preliminary publication order number: ds-am6612_i package information so-8: 8lead h x 45
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